Tuesday, March 30, 2010

Smoltek Reveals Method of Growing Carbon Nanotubes for CMOS Devices

Smoltek AB (Gothenburg, SE) earned U.S. Patent 7,687,876 for its method of growing carbon nanostructures on a substrate suitable for manufacturing electronic devices such as an electron beam writer, and a field emission display.   According to inventor Mohammad Shafiqul Kabir, the method provides a way of integrating nanostructures into CMOS technology and a means to achieve downscaling, higher component density and new functionality in, e.g., integrated circuits.

The nanostructures  are preferably made predominantly from carbon, but other elements may also be used.  Nanostructures include carbon nanotubes and other related structures such as nanofibers, nanoropes, and nanowires.

By carbon nanotube (CNT), is meant a hollow cylindrical molecular structure, composed principally of covalently bonded sp2-hybridized carbon atoms in a continuous network of edge-fused 6-membered rings, and having a diameter of from about 0.5 to about 50 nm. Typically a nanotube is capped at one or both ends by a hemispherical carbon cap having fused 5- and 6-membered rings of carbon atoms, though the nanotubes of the present invention are not necessarily capped. Carbon nanotubes may be, in length, from a few nanometers, to tens or hundreds of microns, to several centimeters

Smoltek develops, manufactures and sells carbon nanostructure based applications for the semiconductor industry. The company’s technology enables corporations and scientists to be in the absolute forefront of research, technical development and production within areas such as nanotechnology, materials science, and microelectronics.

Kabir developed a method of growing/depositing nanostructures utilizing existing CMOS technology; a method of growing nanostructures on CMOS compatible conducting substrates and glass substrate and flexible polymer substrates used in areas that utilize thin film technology. He also developed a method to control the chemical interactions and hence controlling the end chemical compounds in the nanostructures; and a method to control the chemical reactions by having multilayer material stacks consisting of at least one intermediate layer between the substrate and a catalyst layer, wherein the intermediate layer is not of the same material as either the catalyst layer or the conducting substrate.

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