Intel Corporation (Santa Clara, CA) has developed a new method for forming an interconnect of single-walled carbon nanotubes on a sacrificial substrate; transferring the interconnect from the sacrificial substrate to a circuit substrate; and coupling the interconnect to a contact point on the circuit substrate.
Single-walled carbon nanotubes generally require high temperature formation processing (e.g., 900.degree. C. to 1100.degree. C.) making such tube challenging for use as interconnects formed directly on circuit structures where high temperature processing might damage the underlying circuit structure.
According to Intel researchers Florian Gstrein, Valery M. Dubin, Juan E Dominguez and Adrien R Lavoie the method includes forming a nanotube bundle on a circuit substrate between a first contact point and a second contact point, the nanotube defining a lumen therethrough; filling a portion of a length of the lumen of the nanotube bundle with an electrically conductive material; and coupling the electrically conductive material to the second contact point.
A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor including a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures including carbon nanotube bundles can be fabricated. Intel’s single wall carbon nanotube interconnects are described fully in U.S. Patent Application 20100022083.